Si4953DY

Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –30 rDS(on) (W) 0.053 @ VGS = –10 V 0.095 @ VGS = –4.5 V ID (A) "4.9 "3.6 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View S1 G1 S2 G2 D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg –30 "20 "4.9 "3.9 "30 –1.7 2.0 1.3 –55 to 150 V A W _C Thermal Resistance Ratings Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 62.5 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600...