AFP3407AS

Alfa-MOS Technology General Description AFP3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP3407AS 30V P-Channel Enhancement Mode MOSFET Features z -30V/-2.8A,RDS(ON)=66mΩ@VGS=-10.0V z -30V/-2.4A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOT-23 package design Application z Power Management in Note book z LED Display z DC-DC System z LCD Panel Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP3407ASS23RG 7SYW SOT-23 ※ 7S parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP3407ASS23R...