N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN2308A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN2308A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFN2308A
60V N-Channel Enhancement Mode MOSFET
Features
60V/3.5A,RDS(ON)=98mΩ@VGS=10V 60V/2.5A,RDS(ON)=118mΩ@VGS=4.5V Super high density cell design for extremely
low RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-23 package design
Application
Portable Equipment Battery Powered System
Net Working System
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2308AS23RG
8AYW
SOT-23
※ 8A parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = ...
Similar Datasheet