AFN2316A

Alfa-MOS Technology General Description AFN2316A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN2316A 40V N-Channel Enhancement Mode MOSFET Features 40V/4.3A,RDS(ON)= 40mΩ@VGS=10V 40V/3.9A,RDS(ON)= 48mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application DC/DC Converters Load Switch Portable and Consumer Applications Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN2316AS23RG 66YW SOT-23 ϡʳ 66 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 5...