N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN2330A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN2330A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFN2330A
90V N-Channel Enhancement Mode MOSFET
Features
90V/2.8A,RDS(ON)=200mΩ@VGS=10V 90V/2.0A,RDS(ON)=210mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
Application
DC/DC Converters Load Switch LED Backlighting in LCD TVs
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2330AS23RG
30YW
SOT-23
ϡʳ 30 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡ...
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