N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFN3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFN3406AS
30V N-Channel Enhancement Mode MOSFET
Features
30V/2.8A,RDS(ON)=40mΩ@VGS=10V 30V/2.4A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3406ASS23RG
6SYW
SOT-23
ϡʳ 6S parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN3406ASS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev...
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