2N60S MOSFET Datasheet

2N60S Datasheet, PDF, Equivalent


Part Number

2N60S

Description

N-Channel Super Junction Power MOSFET

Manufacture

PINGWEI

Total Page 9 Pages
Datasheet
Download 2N60S Datasheet


2N60S
2N60(F,B,H,G,D)S
2 Amps,600 Volts N-Channel Super Junction Power MOSFET
FEATURE
2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220AB
2N60S
ITO-220AB
2N60FS
TO-262
2N60HS
TO-263
2N60BS
TO-252
2N60GS
TO-251
2N60DS
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
2N60(F,B,H,G,D)S
600
±30
2
6
45
1
0.06
15
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
lbf·in
N·m
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25
Version1.0-2015.2
Symbol
Rth(J-c)
Rth(ch-c)
Rth(ch-a)
PD
ITO-220
7.8
7.8
80
16
TO-220/TO-262/
TO-263
TO-251/TO-252
5.4 5.4
5.4 5.4
62 62
23 23
Units
/W
/W
/W
W
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2N60S
Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current,Forward
IGSSF
Gate-Body Leakage Current,Reverse
IGSSR
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(on)
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Test Conditions
VGS=0V,ID=250uA
Reference to 25℃,
ID=250uA
VDS=600V,VGS=0V
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
VDS=VGS,ID=250uA
VGS=10V,ID=1A
VDS=50V,VGS=0V,
f=1.0MHZ
Switching Characteristics
Turn-On Delay Time
td(on) VDD=380V,ID=1A,
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
RG=50Ω
(Note4,5)
Turn-Off Fall Time
tf
Total Gate Charge
Qg VDS=480V,ID=2A,
Gate-Source Charge
Qgs VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD IS=2A,VGS=0V
Reverse Recovery Time
trr VGS=0V,IS=2A,
Reverse Recovery Charge
Qrr dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,L=22.5mH,Rg=25Ω,IAS=2A ,starling TJ=25.
3. ISDID,dI/dt=200A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Min Typ Max Units
600
0.6
--
--
--
V
V/
1 μA
1 μA
-1 μA
24
2.2 2.5
V
Ω
190
13
1.1
pF
pF
pF
6
3
65
11
3.2
0.6
1.2
ns
ns
ns
ns
nC
nC
nC
--
2
--
6
- - 1.3
140
0.65
A
A
V
ns
μC
Version1.0-2015.2
www.perfectway.cn


Features 2N60(F,B,H,G,D)S 2 Amps,600 Volts N-Cha nnel Super Junction Power MOSFET FEATU RE  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10 V/1A  Low gate charge  Low Ciss Fast switching  100% avalanche te sted  Improved dv/dt capability TO- 220AB 2N60S ITO-220AB 2N60FS TO-262 2 N60HS TO-263 2N60BS TO-252 2N60GS TO -251 2N60DS Absolute Maximum Ratings(T C=25℃,unless otherwise noted) Parame ter Symbol Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pul se Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Ene rgy (Note1) Reverse Diode dV/dt (Note 3 ) Operating Junction and Storage Temper ature Range Maximum lead temperature fo r soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EA R dv/dt TJ,TSTG TL Mounting Torque 6- 32 or M3 screw 2N60(F,B,H,G,D)S 600 ± 30 2 6 45 1 0.06 15 -55 to +150 260 10 1.1 UNIT V A mJ A mJ V/ns ℃ ℃ lbf in N·m Thermal Characteristics Parameter Thermal resistanc.
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