2N60S

2N60(F,B,H,G,D)S 2 Amps,600 Volts N-Channel Super Junction Power MOSFET FEATURE  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60S ITO-220AB 2N60FS TO-262 2N60HS TO-263 2N60BS TO-252 2N60GS TO-251 2N60DS Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 2N60(F,B,H,G,D)S 600 ±30 2 6 45 1 0.06 15 -55 to +150 260 10 1.1 UNIT V A mJ A mJ V/ns ℃ ℃ lbf·in N·m Thermal Characteristics Parameter Thermal resistanc...