Document
2N60(F,B,H,G,D)S
2 Amps,600 Volts N-Channel Super Junction Power MOSFET
FEATURE
2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 2N60S
ITO-220AB 2N60FS
TO-262 2N60HS
TO-263 2N60BS
TO-252 2N60GS
TO-251 2N60DS
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
2N60(F,B,H,G,D)S
600 ±30 2 6 45 1 0.06 15 -55 to +150
260
10 1.1
UNIT
V
A
mJ A mJ V/ns ℃ ℃ lbf·in N·m
Thermal Characteristics
Parameter
Thermal resistanc.