NX138AKS

NX138AKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 170 mA Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 170 mA; Tj = 25 °C resistance - 3 4.5 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided...