AFN10A60D

Alfa-MOS Technology AFN10A60D 600V / 10A N-Channel Enhancement Mode MOSFET General Description AFN10A60D is an N-channel enhancement mode Power MOSFET which is produced using VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Pin Description SYMBOL Features 600V/5A,RDS(ON)=0.58Ω(typ.)@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability Application AC-DC Switching Power Supply LCD / LED / PDP TV Lighting Solar Inverter TO-220F-3L Absolute Maximum Ratings (Tc=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate –Source Voltage Drain Current DC Pluse Single Pulsed Avalanche Energy L=6.36mH, IAS=10A, VDD=90V, RG=25Ω, star...