Document
Alfa-MOS
Technology
General Description
AFP3493W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFP3493W
20V P-Channel Enhancement Mode MOSFET
Features
-20V/-7.3A,RDS(ON)=28mΩ@VGS=4.5V -20V/-4.0A,RDS(ON)=32mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design
Application
Load Switch PA Switch Battery Switch
Pin Define
Pin 1 2 3 4 5 6
Symbol D D G S D D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3493WTS6RG
93WYW
TSOP-6
ϡʳ 93W parts code
ϡʳ Y
year code ( 0 ~ 9 )
ϡʳ W week code ( A ~.