N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFN6810W
100V N-Channel Enhancement Mode MOSFET
Features
z 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V
z Super high density cell design for extremely low RDS (ON)
z TSOP-6 package design
Application
z Power Management in Note book z LED Display z DC-DC System z LCD Panel
Pin Define
Pin 1 2 3 4 5 6
Symbol G1 S2 G2 D2 S1 D1
Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN6810WTS6RG
N10YW
TSOP-6
※ N10 ※Y ※W
parts code year code ( 0 ~ 9 ) week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
※ AFN6810WTS6RG : 7” Tape & Reel ; ...
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