N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN3458BW, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFN3458BW, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFN3458BW
60V N-Channel Enhancement Mode MOSFET
Features
60V/5.6A,RDS(ON)=135mΩ@VGS=10V 60V/3.8A,RDS(ON)=145mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design
Application
Portable Equipment Battery Powered System Net Working System
Pin Define
Pin 1 2 3 4 5 6
Symbol D D G S D D
Description Drain Drain Gate Source Drain Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3458BWTS6RG
58BYW
TSOP-6
ϡʳ 58B parts code ϡʳ Y year co...
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