N&P-Channel MOSFET
Alfa-MOS
Technology
General Description
AFC6332, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFC6332, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-363 )
AFC6332
20V N & P Pair Enhancement Mode MOSFET
Features
N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V
P-Channel -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 840 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1440 mΩ@ VGS =-1.8V
Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design
Application
Load Switch for Portable Devices, Smart Phones, Pagers
Pin Define
Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Ordering Information
Part Ordering No.
P...
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