Document
Alfa-MOS
Technology
General Description
AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-363 )
AFP1933
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-0.55A, R =DS(ON) 900 mΩ@ VGS =-10V -30V/-0.35A, R =DS(ON) 1000 mΩ@ VGS =-4.5V -30V/-0.15A, R =DS(ON) 1800 mΩ@ VGS =-2.5V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories PA Switch Level Switch
Pin Define
Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1
Ordering Information
Part Ordering No.
Part Marking
Package
AFP1933S36RG
.