2N7007

2N7007 N-Channel Enhancement-Mode MOS Transistor ~Siliconix ~ incorporated PRODUCT SUMMARY V(BR)OSS rOS(ON) (V) (.n ) 10 (A) 240 45 0.065 PACKAGE TO-92 Performance Curves: VNDN24 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN =ABSOLUTE MAXIMUM RATINGS (TC 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL 2N7007 UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Tc= 25°C Tc = 100°C Power Dissipation Operating Junction Temperature Tc= 25°C Tc = 100°C Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po Tj Tstg TL 240 ±40 0.065 0.041 0.260 0.4 0.16 -55 to 150 -55 to 150 300 V A W °C THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Ambient SYMBOL RthJA 1Pulse width limited by maximum junction temperature 6-18 2N7007 312.5 UNITS °C/W .-rSiliconix ~ incorporatec ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS TYp2 STATIC Drain-Sour...