2N7008

2N7008 N-Channel Enhancement-Mode MOS Transistor ~SilicDnix ~ incorporated PRODUCT SUMMARY V(BR)OSS rOS(ON) (V) (.0) 10 (A) 60 7.5 0.15 PACKAGE TO-92 Performance Curves: VNDS06 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL 2N7008 UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Tc= 25°C Tc = 100°C Power Dissipation Tc= 25°C Tc = 100°C Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po Tj Tstg TL 60 ±40 0.15 0.1 1 400 160 -55 to 150 -55 to 150 300 V A mW °C THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Ambient SYMBOL RthJA 1Pulse width limited by maximum junction temperature 6-20 2N7008 312.5 UNITS °C/W ~Siliconix .L;II incorporated ELECTRICAL CHARACTERISTICS 1 PARAMETER SYMBOL TEST CONDITIONS TYp2 STATIC Drain-Source Br...