3N164

3N163 SERIES P·Channel Enhancement·Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (fi) (mA) PACKAGE 3N163 -40 250 -50 TO·72 3N164 -3~ 300 -50 TO-72 Performance Curves: MRA (See Section 7) .:rSiliconix ..z;;JI incorporated TO·72 BOTTOM VIEW 1 DRAIN 2 GATE 3 SUBSTRATE, CASE 4 SOURCE =ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Transient Gate-Source Voltage Continuous Drain Current Power Dissipation Power Derating Operating Junction Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL Vos VGS ID PD TJ T stg TL 3N163 3N164 -40 -3~ ±4o ±3o ±125 ±125 -50 -50 375 375 33 -55 to 150 -65 to 200 300 UNITS V mA mW DC 6-22 ....Siliconix ~ incorporated ELECTRICAL CHARACTERISTICS 1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Gate Threshold Voltage Gate-Source Voltage Gate-...