BSS129

888129 N-Channel Depletion-Mode MOS Transistor . HS i l i c o n i x incorporated PRODUCT SUMMARY V(BR)OSV rOS(ON) (V) (.n ) 10 (A) PACKAGE 230 20 0.15. TO-92 CORM CD = Center Drain. RM = Reverse Mold Performance Curves: VDDV24 (See Section 7) TO-92-18 BOTTOM VIEW 1 GATE 2 DRAIN 3 SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL BSS129 UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 I TA= 35DC Power Dissipation Operating Junction and Storage Temperature Lead Temperature (1/16" from case for fa seconds) Vos VGS 10 10M Po TJ. Tstg TL 230 ±20 0.15 0.60 1 -55 to 150 300 V A W DC THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Ambient SYMBOL RthJA 1Pulse width limited by maximum junction temperature 6-36 BSS129 125 UNITS DC/W tcrSiliconix ~ incorporated ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate...