MFE823

MFE823 P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY PART V(BR)OSS 9fs NUMBER (V) (mS) 10 (rnA) PACKAGE MFE823 -25 1 -30 TQ-18 Performance Curves: MRA (See Section 7) ~Siliconix ~ incorporated TO-18 BOTTOM VIEW 1 DRAIN 2 GATE 3 SOURCE, SUBSTRATE CASE =ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL MFE823 UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation TA= 25°C TA= 25°C Power Derating Operating Junction Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 Po TJ Tstg TL -25 ±10 -30 375 3 -55 to 150 -65 to 200 300 V mA mW mW/oC °C 6-38 .rSiliconix ~ incorporated ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage SYMBOL V(BR)DSS VGS(th) Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 DYNAMIC ~~~~:~gnductance 3 Common Source Ou...