ND2012 SERIES
N-Channel Depletion-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSV rOS(ON) 10
NUMBER (V)
(n.) (A)
...
ND2012 SERIES
N-Channel Depletion-Mode MOS
Transistors
PRODUCT SUMMARY
PART V(BR)OSV rOS(ON) 10
NUMBER (V)
(n.) (A)
PACKAGE
ND2012L 200
12 0.16
TO-92
ND2012E 200
12 0.22 TO-206AC
tcrSiliconix
~ incorporatE!d
TO-92
BOTTOM VIEW
~r::::::4
~
~
1 SOURCE . 2 GATE
3 DRAIN
TO-206AC (TO-52)
BOTTOM VIEW
Performance Curves: VDDQ20 (See Section 7)
1 SOURCE 2 GATE 3 DRAIN & CASE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
ND2012L
ND2012E 2
Drain-Source Voltage
Vos 200
200
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C TA = 100°C
Power Dissipation
TA= 25°C TA= 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VGS 10 10M Po Tj. Tstg
TL
±30 0.16 0.10
±20 0.22 0.14
0.8 0.8
0.80
1.5
0.32
0.60
-55 to 150
300
UNITS V
A
W °C
THERMAL RESISTANCE
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RthJA
1Pulse width limited by m...
