ND2020L

ND2020 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE ND2020L 200 20 0.132 TO-92 ND2020E 200 20 0.18 TO-206AC a'Y"Siliconix ~ incorporated TO-92 BOTTOM VIEW ~§ 1 SOURCE 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW Performance Curves: VDDQ20 (See Section 7) 1 SOURCE 2 GATE 3 DRAIN & CASE =ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL ND2020L ND2020E 2 Drain-Source Voltage Vos 200 200 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VGS 10 10M Po TJ. Tstg h ±30 0.132 0.083 ±20 0.18 0.11 0.8 0.8 0.80 1.5 0.32 0.60 -55 to 150 300 UNITS V A W DC THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL Junction-to-Ambient RthJA 1Pulse width limited by maximum junctio...