ND2406B

ND2406 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (0) (A) PACKAGE ND2406L 240 6 0.23 TO-92 ND2406B 240 6 0.57 TO-205AF ~Siliconix ~ incorporated TO-92 BOTTOM VIEW ~~ ~ ~ 1 SOURCE 2 GATE 3 DRAIN TO-205AF BOTTOM VIEW Performance Curves: VDDV24 (See Section 7) 1 SOURCE 2 GATE 3 DRAIN & CASE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless.otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL ND2406L ND2406B 2 Drain-Source Voltage Vos 240 240 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25DC TA = 100DC Power Dissipation TA= 25DC TA = 100DC Operating Junction and Storage Temperature Lead Temperature (1/1 6" from case for 10 seconds) VGS 10 10M Po TJ. T5t9 h ±30 0.23 0.14 ±20 0.57 0.36 0.90 0.80 0.32 1 5 2 -55 to 150 300 UNITS V A W DC THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL Junction-to-Ambient RthJA 1Pulse width limited by maximum junction temperature 2Reference...