TP0610L

TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors .-r-Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) TP061DE , -60 10 -0.25 PACKAGE TO-206AC TP0610L -60 10 -0.18 TO-92 TP0610T -60 10 -0.12 80T-23 Performance Curves: VPOS06 (See Section 7) SOT-23 TOP VIEW TO-92 BOTTOM VIEW ~~ ~ ~ 1 SOURCE 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW DRAIN SOURCE GATE 1 SOURCE 2 GATE 3 DRAIN & CASE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL TP0610E 2 TP0610L TP0610T UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA= 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po Tj. Tstg h -60 ±20 -0.25 -0.15 -1 1.5 0.60 -60 ±30 -0.18 -0.11 -0.8 0.80 0.32 -55 to 150 300 -60 ±30 -0.12 -0.07 -0.4 0.36 0.14 V A W °...