TP0610 SERIES
P-Channel Enhancement-Mode MOS Transistors
.-r-Siliconix
~ incorporated
PRODUCT SUMMARY
PART V(BR)OSS r...
TP0610 SERIES
P-Channel Enhancement-Mode MOS
Transistors
.-r-Siliconix
~ incorporated
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(.n ) (A)
TP061DE
,
-60
10 -0.25
PACKAGE TO-206AC
TP0610L
-60
10 -0.18 TO-92
TP0610T
-60
10 -0.12 80T-23
Performance Curves: VPOS06 (See Section 7)
SOT-23
TOP VIEW
TO-92
BOTTOM VIEW
~~
~
~
1 SOURCE 2 GATE 3 DRAIN
TO-206AC (TO-52)
BOTTOM VIEW
DRAIN
SOURCE GATE
1 SOURCE 2 GATE
3 DRAIN & CASE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL TP0610E 2 TP0610L TP0610T UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C TA = 100°C
Power Dissipation
TA= 25°C TA= 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Vos VGS
10
10M
Po Tj. Tstg
h
-60 ±20 -0.25 -0.15 -1 1.5 0.60
-60 ±30 -0.18 -0.11 -0.8 0.80 0.32 -55 to 150 300
-60 ±30 -0.12 -0.07 -0.4 0.36 0.14
V A W °...