VN40AFD

~Siliconix .L;II incorporated VN40AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V(BR)OSS rOS(ON) (V) (!l) 10 (A) 40 5 1.14 PACKAGE TO-22080 80 = Side Drain Performance Curves: VNDQ06 (See Section 7) TO-220SD TOP VIEW o 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Tc= 25°C Tc = 100°C Power Dissipation Tc= 25°C Tc = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL Vos VGS ID 10M Po Tj. Tstg h VN40AFD 40 ±30 1.14 0.72 3 15 6 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Case SYMBOL RthJC 1Pulse width limited by maximum junction temperature. VN40AFD 8.3 UNITS °C/W 6-51 VN40AFD ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate T...