VN46AFD

.:r'Siliconix ~ incorporated VN46AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V(BR)eSS (V) res (ON) (il) Ie (A) 40 3 1.46 PACKAGE TO-220SD Performance Curves: VNOQ06 (See Section 7) TO-220SD TOP VIEW o 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 =ABSOLUTE MAXIMUM RATINGS (TC 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Tc= 25°C Tc = 100°C Power Dissipation Tc= 25°C Tc = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL Ves VGS Ie leM Po TJ. T stg h VN46AFD 40 ±30 1.46 0.92 3 15 6 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Case SYMBOL RthJC 1Pulse width limited by maximum junction temperature VN46AFD 8.3 UNITS °C/W 6-53 VN46AFD ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage...