VN66AD

fCTSiliconix .LJ!I incorporated VN66 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE VN66AD 60 3 1.7 TO-220 TO-220/TO-220SD TOP VIEW o VN66AFD 60 3 1.46 TO-220SD Performance Curves: VNDQ06 (See Section 7) TO-220 1 GATE 2 & TAB - DRAIN 3 SOURCE 123 TO-220SD 1 SOURCE 2 GATE 3 & TAB - DRAIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) 2 PARAMETERS/TEST CONDITIONS SYMBOL VN66AD VN66AFD UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Tc= 25°C Tc = 100°C Power Dissipation Tc= 25°C Tc = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS ID IDM Po TJ. Tstg h 60 60 ±30 ±30 1.7 1.46 1 0.92 33 20 15 86 -55 to 150 300 V A W °C THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL Junction-to-Case RthJC ~pulse width limited by maximum junction temperature. Absolute maximum ra...