fCTSiliconix
.LJ!I incorporated
VN66 SERIES
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS ...
fCTSiliconix
.LJ!I incorporated
VN66 SERIES
N-Channel Enhancement-Mode MOS
Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(il) (A)
PACKAGE
VN66AD
60
3 1.7 TO-220
TO-220/TO-220SD
TOP VIEW
o
VN66AFD 60
3 1.46 TO-220SD
Performance Curves: VNDQ06 (See Section 7)
TO-220
1 GATE 2 & TAB - DRAIN 3 SOURCE
123
TO-220SD
1 SOURCE 2 GATE 3 & TAB - DRAIN
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) 2
PARAMETERS/TEST CONDITIONS
SYMBOL
VN66AD
VN66AFD
UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
Tc= 25°C Tc = 100°C
Power Dissipation
Tc= 25°C Tc = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Vos VGS ID
IDM Po TJ. Tstg
h
60 60 ±30 ±30 1.7 1.46
1 0.92 33 20 15 86
-55 to 150 300
V A W °C
THERMAL RESISTANCE
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RthJC
~pulse width limited by maximum junction temperature. Absolute maximum ra...