VN0603L

fCrSiliconix ~ incorporated VN0603 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (,(1) (A) PACKAGE VN0603L 60 3.5 0.30 TO-92 VN0603T 60 3.5 0.22 SOT-23 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDS06 (See Section 7) SOT-23 TOP VIEW 1 DRAIN 2 SOURCE 3 GATE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN0603L VN0603T Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA= 100°C Power Dissipation TA= 25°C TA=100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M PD Tj. Tstg It 60 60 ±30 0.30 ±30 0.22 0.21 0.14 1 0.8 0.32 0.8 0.36 0.14 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Ambient SYMBOL RthJA VN0603L 156 VN0603T 350 UNITS °C/W 1Pulse width limited by maximum juncti...