Document
~Siliconix .,1;11 incorporated
VN0610L, VN10KE, VN10KM
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(il) (A)
PACKAGE
TO-206AC (TO-52)
BOTTOM VIEW
VN0610L
60
5
0.27
TO-92
VN10KE
60
5 0.17 TO-206AC
VN10KM
60
5 0.31 TO-237
Performance Curves: VNDP06 (See Section 7)
TO-237
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
TO-92
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN & TAB
1 SOURCE
2 GATE 3 DRAIN
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL VN0610L VN10KE VN10KM UNITS
Drain-Source Voltage
Gate-Source Voltage 2
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C TA = 100°C
Power Dissipation
TA= 25°C TA = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Vos Vas 10
10M Po TJ. Tstg TL
60 60 60
15/-0.3 0.27
15/-0.3 0.17
15/-0.3 0.31
0.17
0.11
0.20
1
O.B
0.32
1 0.3 0.12
1 1 0.4
-55 to 150
300
V A W °C
THE.