VN0808L

flr]l""Siliconix ~ incorporated VN0808 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.(1 ) (A) PACKAGE VNOSOSL SO 4 0.30 TO-92 VNOSOSM SO 4 0.33 TO-237 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDQ09 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN0808L VN0808M Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 Pulsed Drain Current 1. 2 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VOS VGS 10 10M Po TJ. Tstg h SO SO ±30 0.30 ±30 0.33 0.19 0.21 1.9 O.S 0.32 1.9 1 0.4 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL Junction-to-Ambient RthJA 1Pulse width limited by maximum junction temperature 2This para...