VN1206B

tlCrSiliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (n) (A) PACKAGE VN12068 120 6 0.59 TO-205AD VN1206D 120 6 1.19 TO-220 Performance Curves: VNDQ12 (See Section 7) VN1206B, VN1206D N-Channel Enhancement-Mode MOS Transistors TO-20SAO (TO-39) BOTTOM VIEW TO-220 1 SOURCE 2 GATE 3 DRAIN & CASE TOP VIEW o 1 GATE 2 & TAB - DRAIN 3 SOURCE 123 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 2 PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Vos Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current 1 Tc= 25°C Tc = 100°C Power Dissipation Tc= 2SoC Tc = 100°C Operating Junction and Storage Temperature Lead Temperature (1116" from case for 10 seconds) 10 10M Po TJ. T stg TL VN1206B VN1206D 120 120 ±20 0.59 ±30 1.19 0.37 0.75 2.5 2.S 5 20 28 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL VN1206B Junction-to-Case RthJC 25 1Pulse width limited by maximu...