VN1210L

fCrSiliconix ~ incorporated VN1210 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE VN1210L 120 10 0.18 TO-92 VN1210M 120 10 0.20 TO-237 Performance Curves: VNDQ12 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW ~~ 1 SOURCE 2 GATE 3 DRAIN & TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERSITEST CONDITIONS SYMBOL Drain-Source Voltage VOS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) 10 10M Po TJ. Tstg TL VN1210L VN1210M 120 120 ±30 0.18 0.11 ±30 0.20 0.13 22 0.8 1 0.32 0.40 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Ambient SYMBOL RthJA VN1210L 156 VN1210M 125 UNITS °C/W 1Pulse width limited by ma...