~Siliconix ~ incorporated
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER
(V)
(.0. )
(A)
PACKAGE
VN1710L
170
1...
~Siliconix ~ incorporated
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER
(V)
(.0. )
(A)
PACKAGE
VN1710L
170
10 0.17 TO-92
VN171 OM 170
10 0.19 TO-237
Performance Curves: VNDB24 (See Section 7)
VN1710 SERIES
N-Channel Enhancement-Mode MOS
Transistors
TO-92
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
TO-237
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
VN1710L
VN1710M
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C TA = 100°C
Power Dissipation
TA= 25°C TA = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VOS VGS 10
10M Po Tjo T 5 tg
TL
170 170
±30 0.17 0.11
±30 0.19 0.12
0.47
0.54
0.8 1.0
0.32
0.4
-55 to 150
300
UNITS V A
W °C
THERMAL RESISTANCE
THERMAL RESISTANCE Junction-to-Ambient
SYMBOL RthJA
VN1710L 156
VN1710M 125
UNITS °C/W
1Pulse width limited by...
