VN2010L

.r'Siliconix ~ incorporated VN2010 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (Il) (A) PACKAGE VN2010L 200 10 0.19 TO-92 VN2020L 200 20 0.08 TO-92 Performance Curves: VNDQ20 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN2010L VN2020L Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po Tj. Tstg h 200 200 ±30 0.19 ±30 0.08 0.12 0.055 0.8 0.8 0.32 0.5 0.8 0.32 -55 to 150 300 UNITS V A W °C III THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Ambient SYMBOL RthJA 1Pulse width limited by maximum junction temperature VN2010L 156 VN2020L 156 UNITS °C/W 6-87 VN2010 SERIE...