VN2222KM

flCrSiliconix ~ incorporated VN2222KM, VN2222L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN2222KM 60 7.5 0.25 TO-237 VN2222L 60 7.5 0.23 TO-92 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDP06 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN2222KM VN2222L Drain-Source Voltage Gate-Source Voltage 2 Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation T A= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po TJ' T stg h 60 60 +15, -0.3 0.25 0.16 +15, -0.3 0.23 0.14 11 1 0.8 0.4 0.32 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL Junction-to-Ambient RthJA 1 Pulse width limited by maximum junction temperature 2 Feat...