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PE0102A Dataheets PDF



Part Number PE0102A
Manufacturers semi one
Logo semi one
Description N-Channel Enhancement Mode Power MOSFET
Datasheet PE0102A DatasheetPE0102A Datasheet (PDF)

N-Channel Enhancement Mode Power MOSFET Description The PE0102A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,I D =2A RDS(ON) < 230mΩ @ VGS=10V (Typ:190mΩ) PE0102A D G S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin Assignment SOT-23 top view Absolute Maximum Rat.

  PE0102A   PE0102A



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N-Channel Enhancement Mode Power MOSFET Description The PE0102A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,I D =2A RDS(ON) < 230mΩ @ VGS=10V (Typ:190mΩ) PE0102A D G S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin Assignment SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Chara.


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