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N-Channel Enhancement Mode Power MOSFET
Description
The PE0102A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =100V,I D =2A RDS(ON) < 230mΩ @ VGS=10V (Typ:190mΩ)
PE0102A
D G
S Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin Assignment
SOT-23 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Chara.