PE01P30

P-Channel Enhancement Mode Power MOSFET Description The PE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Portable equipment and battery powered systems PE01P30 Schematic diagram TO-220-3L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Operating Junction and Storage Temperature Range TJ,TSTG Limit -100 ±20 -30 -21 -140 120 0.8 -55 To 175 Unit V V A A A W W/℃ ℃ www.semi-one.com Page ...