P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
Description
The PE01P18K uses advanced trench technology and design to provide e...
Description
P-Channel Enhancement Mode Power MOSFET
Description
The PE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
(Typ:85mΩ)
● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance
Application
● Power management in notebook computer ● Portable equipment and battery powered systems
PE01P18K
Schematic diagram TO-252 top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-100 ±20 -18 -12 -72 70 0.56 -5...
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