P-Channel Enhancement Mode Power MOSFET
PE1011E
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE1011E uses advanced trench technology to provide exc...
Description
PE1011E
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE1011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
● VDS = -20V,ID =-0.6A RDS(ON) <700mΩ @ VGS=-4.5V RDS(ON) <860mΩ @ VGS=-2.5V
● High Power and current handing capability ● Lead free product is acquired ● Gate-Source ESD Protection
Application
●Battery operated Systems ●Load/ power Switching Cell Phones,Pagers ●Power Supply Converter Circuits
Schematic diagram Marking and pin Assignment
SOT-523 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Ther...
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