PE4606

DESCRIPTION The PE4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 30V,ID = 8A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -6A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 42mΩ @ VGS=-10V ●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package PE4606 N-channel P-channel Schematic diagram Marking and pin Assignment SOP-8 top view ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25℃ TA=70℃ ID Pulsed Drain Current (Note 1) IDM Maximum Power Dissipation TA=25℃ TA=70℃ PD Operating Junction and Storage Temperature Range TJ,TSTG N-Channel 30 ±20 8 6.0 30 2.0 1.44 -55 To 150 P-Channel -30 ±20 -6 -5.0 -30 2.0 1.44 -55 To 150...