PE3409

PE3409 P-Channel Enhancement Mode Power MOSFET Description The PE3409 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features ● VDS =-30V,ID =-5.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Application ● Load switch ● battery protection Schematic diagram Marking and pin assignment SOT23-3 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit -30 ±20 -5.5 -3.2 -15 1 -55 To 150 Unit V V A A A W ℃ WWW.SEMI-ONE.COM Page 1 Thermal Characteristic Thermal Resis...