PE55P5

PE55P5 P-Channel Enhancement Mode Power MOSFET Description The PE55P5 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC Converter Marking and pin assignment SOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit -55 ±20 -5 -3.0 -25 3 -55 To 150 Unit V V A A A W ℃ WWW.S...