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PE55P15K Dataheets PDF



Part Number PE55P15K
Manufacturers semi one
Logo semi one
Description P-Channel Enhancement Mode Power MOSFET
Datasheet PE55P15K DatasheetPE55P15K Datasheet (PDF)

PE55P15K P-Channel Enhancement Mode Power MOSFET Description The PE55P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-55V,ID =-15A RDS(ON) <80mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high freque.

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PE55P15K P-Channel Enhancement Mode Power MOSFET Description The PE55P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-55V,ID =-15A RDS(ON) <80mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC Converter Schematic diagram Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package PE55P15K PE55P15K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Ma.


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