N-Channel Enhancement Mode Power MOSFET
PE6003
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE6003 uses advanced trench technology to provide excel...
Description
PE6003
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
D G
S Schematic diagram
Marking and pin Assignment
Application
●Battery Switch ●DC/DC Converter
SOT-23 -3L top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
60 ±20
3 10 1....
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