PED2023

PED2023 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED2023 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3.2A RDS(ON) = 68 m Ω @ VGS=-4.5V RDS(ON) = 95 m Ω @ VGS=-2.5V RDS(ON) = 140mΩ @ VGS=-1.8V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package S1 11 G1 22 D2 33 66 D1 55 G2 44 S2 Schematic diagram PIN 1 S1 G1 D2 D1 D2 Application ●PWM applications ●Load switch ●Power management D1 G2 S2 DFN2X2-6L top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±12 -3.2 ...