PED2312A

PED2312A Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V ● N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V (6)D1 (2)D2 (2)G1 (5)G2 (1)S1 (4)S2 N-Channel MOSFET P-Channel MOSFET Schematic diagram Application ●PWM applications ●Load switch ●Power management DFN2X2-6L top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ±10 ±12 Drain Current-Continuous ID 3.5 -3 Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM P...