N-Channel Enhancement Mode Power MOSFET
PED3025
N-Channel Enhancement Mode Power MOSFET
Description
The PED3025 uses advanced trench technology and design to p...
Description
PED3025
N-Channel Enhancement Mode Power MOSFET
Description
The PED3025 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● SMPS and general purpose applications ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin Assignment
DFN 3x3 EP top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current ...
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