N-Channel Enhancement Mode Power MOSFET
PE8205
N-Channel Enhancement Mode Power MOSFET
Description
The 8205 uses advanced trench technology to provide excelle...
Description
PE8205
N-Channel Enhancement Mode Power MOSFET
Description
The 8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
● VDS = 20V, ID = 6A RDS(ON) < 34mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
D1 G1
G2
D2
S1 S2
Schematic diagram
Application
●Battery protection ●Load switch ●Power management
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20 ±10
6 25 1.5 -55 To 150...
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